Fin field effect transistors including multiple lattice constants and methods of fabricating the same

Fin field effect transistors including multiple lattice constants and methods of fabricating the same

A Field Effect Transistor (FET) structure may include a fin on a substrate having a first lattice constant and at least two different lattice constant layers on respective different axially oriented surfaces of the fin, wherein the at least two different lattice constant layers each comprise lattice...

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Bibliographische Detailangaben
Hauptverfasser: JEONG HEEDON, KANG MYUNG GIL, CHO CHIWON, OH CHANGWOO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A Field Effect Transistor (FET) structure may include a fin on a substrate having a first lattice constant and at least two different lattice constant layers on respective different axially oriented surfaces of the fin, wherein the at least two different lattice constant layers each comprise lattice constants that are different than the first lattice constant and each other.