Method for fabricating semiconductor device

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the resistor region of the substrate; forming a tank in the STI; and forming a resistor in...

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Bibliographische Detailangaben
Hauptverfasser:	HUANG REN-PENG, CHEN YEN-MING, TSAI TENGUN, LIN CHIH-HSUN, HSU CHUN-WEI, HUANG PONG, KUNG CHANG-HUNG, YANG JIE-NING, HSU CHIA-LIN, LI YU-TING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the resistor region of the substrate; forming a tank in the STI; and forming a resistor in the tank and on two sides of the top surface of the STI outside the tank.