Method of forming an electrical contact between a support wafer and the surface of a top silicon layer of a silicon-on-insulator wafer and an electrical device including such an electrical contact

Method of forming an electrical contact between a support wafer and the surface of a top silicon layer of a silicon-on-insulator wafer and an electrical device including such an electrical contact

Method of forming an electrical contact between a support wafer and a surface of a top silicon layer of a silicon-on-insulator wafer. The method comprises etching a cavity into the top silicon layer and the insulator layer. A selective epitaxial step is performed for growing an epitaxial layer of si...

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Bibliographische Detailangaben
Hauptverfasser: SCHWARTZ WOLFGANG, STEINMANN PHILIPP, SCHIEKOFER MANFRED, KRAUS MICHAEL, SCHARNAGL THOMAS
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Method of forming an electrical contact between a support wafer and a surface of a top silicon layer of a silicon-on-insulator wafer. The method comprises etching a cavity into the top silicon layer and the insulator layer. A selective epitaxial step is performed for growing an epitaxial layer of silicon inside the cavity up to the surface of the top silicon layer. An electrical device comprising an electrical contact between a support wafer and a surface of a top silicon layer of a silicon-on-insulator wafer formed according to the inventive method.