P-type metal oxide semiconductor
The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1−xGa1−yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0
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| Hauptverfasser: | , , , , |
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1−xGa1−yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0 |
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