Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systems

Methods for forming ruthenium films and semiconductor devices, such as capacitors, that include the films are provided.

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Bibliographische Detailangaben
Hauptverfasser: GEALY DAN, BHAT VISHWANATH, ANTONOV VASSIL
Format: Patent
Sprache:eng
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Zusammenfassung:Methods for forming ruthenium films and semiconductor devices, such as capacitors, that include the films are provided.