Implantation before epitaxial growth for photonic integrated circuits

Fabrication of a photonic integrated circuit (PIC) including active elements such as a semiconductor optical amplifier (SOA) and passive elements such as a floating rib waveguide. Selective area doping through ion implantation or thermal diffusion before semiconductor epitaxial growth is used in ord...

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Bibliographische Detailangaben
Hauptverfasser:	IONOV STANISLAV I, ROYTER YAKOV, RAJAVEL RAJESH D
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICAL LOGIC ELEMENTS OPTICS PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF TRANSPORTING
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Beschreibung
Zusammenfassung:	Fabrication of a photonic integrated circuit (PIC) including active elements such as a semiconductor optical amplifier (SOA) and passive elements such as a floating rib waveguide. Selective area doping through ion implantation or thermal diffusion before semiconductor epitaxial growth is used in order to define the contact and lateral current transport layers for each active device, while leaving areas corresponding to the passive devices undoped. InP wafers are used as the substrate which may be selectively doped with silicon.