Method of forming finFET of variable channel width

Embodiments of present invention provide a method of forming a first and a second group of fins on a substrate; covering a top first portion of the first and second groups of fins with a first dielectric material; covering a bottom second portion of the first and second groups of fins with a second...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HORAK DAVID VACLAV, BERGENDAHL MARC ADAM, KOBURGER, III CHARLES WILLIAM, PONOTH SHOM, YANG CHIHAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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