Semiconductor external cavity laser with integrated planar waveguide bragg grating and wide-bandwidth frequency modulation

The present disclosure describes semiconductor external cavity laser with wide bandwidth frequency modulation capabilities. The laser is preferably packaged in a standard form-factor package, such as a 14-pin butterfly package. The front end of the cavity comprises an integrated planar circuit (e.g., silica-on-silicon planar lightwave circuit with Bragg gratings), and the "back facet" of the laser is implemented as a high-reflection (HR) coated LiNbO3 phase tuning section in the double pass configuration. AC-voltage signal applied to the electrodes of phase tuning section modulates a refractive index of the propagating TE-polarization mode of external cavity and produces frequency modulation. Such frequency modulation is not associated with any thermal behavior of the gain element included in the external cavity laser, and has a negligible phase delay over a wide bandwidth.