Providing a void-free filled interconnect structure in a layer of package substrate

Embodiments of the present disclosure are directed towards techniques and configurations for providing void-free filled interconnect structures in a dielectric layer of a package assembly. In one embodiment, the method for providing a void-free filled interconnect structure may include forming a through hole through a layer of a package substrate, and depositing a conductive material to fill the through hole. Depositing the conductive material may be performed while gradually increasing a current density of the conductive material and correspondingly changing a flow rate of the conductive material. Other embodiments may be described and/or claimed.