Semiconductor device and manufacturing method thereof

A semiconductor device containing: a semiconductor element; a support substrate; an insulating material layer for sealing the semiconductor element and a periphery thereof; a metal thin film wiring layer provided in the insulating material layer, with a part thereof being exposed on an external surf...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHIKAI TOMOSHIGE, INOUE HIROSHI, ITAKURA SATORU, HORI MASAHIKO, SAWACHI SHIGENORI, YAMAGATA OSAMU, KATSUMATA AKIO
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A semiconductor device containing: a semiconductor element; a support substrate; an insulating material layer for sealing the semiconductor element and a periphery thereof; a metal thin film wiring layer provided in the insulating material layer, with a part thereof being exposed on an external surface; and metal vias provided in the insulating material layer and electrically connected to the metal thin film wiring layer. The semiconductor element is provided in a plurality of units and the respective semiconductor elements are stacked via an insulating material such that a circuit surface of each semiconductor element faces the metal thin film wiring layer, and electrode pads of each semiconductor element are exposed without being hidden by the semiconductor element stacked thereabove.