Field-effect transistor and method for manufacturing the same

A field-effect transistor includes a semiconductor layer containing carbon nanomaterials; a first electrode and a second electrode formed in contact with the semiconductor layer; a third electrode for controlling current flowing between the first electrode and the second electrode; and an insulating...

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Bibliographische Detailangaben
1. Verfasser:	ENDOH HIROYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	A field-effect transistor includes a semiconductor layer containing carbon nanomaterials; a first electrode and a second electrode formed in contact with the semiconductor layer; a third electrode for controlling current flowing between the first electrode and the second electrode; and an insulating layer formed between the semiconductor layer and the third electrode. The insulating layer contains an aromatic polyamide comprising a substituent containing 1 to 20 carbon atoms.