Method and system for improved overlay correction

A method for improving alignment in a photolithography machine is provided. The method comprises identifying first empirical alignment data that has been determined from use of a target photomask within at least one non-target tool, and identifying second empirical alignment data that has been deter...

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Bibliographische Detailangaben
Hauptverfasser:	OU TSAI-FU, HSIEH WEN-YAO, LU SHIN-RUNG
Format:	Patent
Sprache:	eng
Schlagworte:	ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A method for improving alignment in a photolithography machine is provided. The method comprises identifying first empirical alignment data that has been determined from use of a target photomask within at least one non-target tool, and identifying second empirical alignment data that has been determined from use of a non-target photomask within a target tool. The method continues by identifying third empirical alignment data that has been determined from use of a non-target photomask within at least one non-target tool, and calculating from the first, second, and third empirical alignment data a predicted alignment data for the target photomask with the target tool. The method then proceeds by aligning the target photomask within the target tool using the predicted alignment data, exposing a pattern from the target photomask onto the wafer in the target tool, and further processing the exposed wafer.