Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof

Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SCHWARTZ JO-ANN THERESA, USMANI SAIFI, SCHLUETER JAMES ALLEN, HUGHES JOHN EDWARD QUINCY, SHI XIAOBO, CASTILLO, II DANIEL HERNANDEZ, CHOO JAE OUK, MUNGAI MARTIN KAMAU NGIGI, WINCHESTER STEVE CHARLES, MARSELLA JOHN ANTHONY, LEDENBACH LAURA, ZHOU HONGJUN
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.