Semiconductor die singulation method

In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GRIVNA GORDON M, PARSEY, JR. JOHN M
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer.