Structure and method for making crack stop for 3D integrated circuits

Structure and method for making crack stop for 3D integrated circuits

A structure to prevent propagation of a crack into the active region of a 3D integrated circuit, such as a crack initiated by a flaw at the periphery of a thinned substrate layer or a bonding layer, and methods of forming the same is disclosed.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MELVILLE IAN D, SHAW THOMAS M, LANDERS WILLIAM F, ZHU HUILONG, GRIESEMER JOHN A, FAROOQ MUKTA G
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A structure to prevent propagation of a crack into the active region of a 3D integrated circuit, such as a crack initiated by a flaw at the periphery of a thinned substrate layer or a bonding layer, and methods of forming the same is disclosed.