Tessellated patterns in imprint lithography

The present invention is directed towards a choice of the shape of the patterned fields for Level 0 (patterned by imprint or photolithography or e-beam, etc.) and Level 1 (patterned by imprint) such that these shapes when tessellated together eliminate the open areas causes by the moats.

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Bibliographische Detailangaben
Hauptverfasser:	SCHUMAKER PHILIP D, SREENIVASAN SIDLGATA V, MCMACKIN IAN M
Format:	Patent
Sprache:	eng
Schlagworte:	ACCESSORIES THEREFOR AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	The present invention is directed towards a choice of the shape of the patterned fields for Level 0 (patterned by imprint or photolithography or e-beam, etc.) and Level 1 (patterned by imprint) such that these shapes when tessellated together eliminate the open areas causes by the moats.