Semiconductor device and method of fabricating the same
For forming a semiconductor device, a via structure is formed through at least one dielectric layer and at least a portion of a substrate. In addition, a protective buffer layer is formed onto the via structure. Furthermore, a conductive structure for an integrated circuit is formed over the substra...
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| creator | MOON KWANG-JIN CHOI GIL-HEYUN JUNG DEOK-YOUNG BANG SUKUL LIM DONGAN PARK BYUNG-LYUL |
| description | For forming a semiconductor device, a via structure is formed through at least one dielectric layer and at least a portion of a substrate. In addition, a protective buffer layer is formed onto the via structure. Furthermore, a conductive structure for an integrated circuit is formed over the substrate after forming the via structure and the protective buffer layer, with the conductive structure not being formed over the via structure. Thus, deterioration of the conductive and via structures is minimized. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8847399B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8847399B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8847399B23</originalsourceid><addsrcrecordid>eNrjZDAPTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychPUchPU0hLTCrKTE4sycxLVyjJSFUoTsxN5WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHBFhYm5saWlk5GxkQoAQB2JS2p</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and method of fabricating the same</title><source>esp@cenet</source><creator>MOON KWANG-JIN ; CHOI GIL-HEYUN ; JUNG DEOK-YOUNG ; BANG SUKUL ; LIM DONGAN ; PARK BYUNG-LYUL</creator><creatorcontrib>MOON KWANG-JIN ; CHOI GIL-HEYUN ; JUNG DEOK-YOUNG ; BANG SUKUL ; LIM DONGAN ; PARK BYUNG-LYUL</creatorcontrib><description>For forming a semiconductor device, a via structure is formed through at least one dielectric layer and at least a portion of a substrate. In addition, a protective buffer layer is formed onto the via structure. Furthermore, a conductive structure for an integrated circuit is formed over the substrate after forming the via structure and the protective buffer layer, with the conductive structure not being formed over the via structure. Thus, deterioration of the conductive and via structures is minimized.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140930&DB=EPODOC&CC=US&NR=8847399B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140930&DB=EPODOC&CC=US&NR=8847399B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MOON KWANG-JIN</creatorcontrib><creatorcontrib>CHOI GIL-HEYUN</creatorcontrib><creatorcontrib>JUNG DEOK-YOUNG</creatorcontrib><creatorcontrib>BANG SUKUL</creatorcontrib><creatorcontrib>LIM DONGAN</creatorcontrib><creatorcontrib>PARK BYUNG-LYUL</creatorcontrib><title>Semiconductor device and method of fabricating the same</title><description>For forming a semiconductor device, a via structure is formed through at least one dielectric layer and at least a portion of a substrate. In addition, a protective buffer layer is formed onto the via structure. Furthermore, a conductive structure for an integrated circuit is formed over the substrate after forming the via structure and the protective buffer layer, with the conductive structure not being formed over the via structure. Thus, deterioration of the conductive and via structures is minimized.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychPUchPU0hLTCrKTE4sycxLVyjJSFUoTsxN5WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHBFhYm5saWlk5GxkQoAQB2JS2p</recordid><startdate>20140930</startdate><enddate>20140930</enddate><creator>MOON KWANG-JIN</creator><creator>CHOI GIL-HEYUN</creator><creator>JUNG DEOK-YOUNG</creator><creator>BANG SUKUL</creator><creator>LIM DONGAN</creator><creator>PARK BYUNG-LYUL</creator><scope>EVB</scope></search><sort><creationdate>20140930</creationdate><title>Semiconductor device and method of fabricating the same</title><author>MOON KWANG-JIN ; CHOI GIL-HEYUN ; JUNG DEOK-YOUNG ; BANG SUKUL ; LIM DONGAN ; PARK BYUNG-LYUL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8847399B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MOON KWANG-JIN</creatorcontrib><creatorcontrib>CHOI GIL-HEYUN</creatorcontrib><creatorcontrib>JUNG DEOK-YOUNG</creatorcontrib><creatorcontrib>BANG SUKUL</creatorcontrib><creatorcontrib>LIM DONGAN</creatorcontrib><creatorcontrib>PARK BYUNG-LYUL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MOON KWANG-JIN</au><au>CHOI GIL-HEYUN</au><au>JUNG DEOK-YOUNG</au><au>BANG SUKUL</au><au>LIM DONGAN</au><au>PARK BYUNG-LYUL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and method of fabricating the same</title><date>2014-09-30</date><risdate>2014</risdate><abstract>For forming a semiconductor device, a via structure is formed through at least one dielectric layer and at least a portion of a substrate. In addition, a protective buffer layer is formed onto the via structure. Furthermore, a conductive structure for an integrated circuit is formed over the substrate after forming the via structure and the protective buffer layer, with the conductive structure not being formed over the via structure. Thus, deterioration of the conductive and via structures is minimized.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device and method of fabricating the same |
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