Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

For forming a semiconductor device, a via structure is formed through at least one dielectric layer and at least a portion of a substrate. In addition, a protective buffer layer is formed onto the via structure. Furthermore, a conductive structure for an integrated circuit is formed over the substra...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MOON KWANG-JIN, CHOI GIL-HEYUN, JUNG DEOK-YOUNG, BANG SUKUL, LIM DONGAN, PARK BYUNG-LYUL
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:For forming a semiconductor device, a via structure is formed through at least one dielectric layer and at least a portion of a substrate. In addition, a protective buffer layer is formed onto the via structure. Furthermore, a conductive structure for an integrated circuit is formed over the substrate after forming the via structure and the protective buffer layer, with the conductive structure not being formed over the via structure. Thus, deterioration of the conductive and via structures is minimized.