Method for separating and transferring IC chips

A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes: forming, on a surface of the wafer, a mask laye...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YAMADA MASAHIRO, IWASAKI KENYA, NISHIKAWA HIROSHI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes: forming, on a surface of the wafer, a mask layer through which a line-shaped pattern to be removed for separating the semiconductor devices or semiconductor integrated circuits is exposed; and etching the exposed pattern to a depth equal to or larger than about of a thickness of the wafer. The line-shaped pattern is formed so as to prevent a test device formed on a gap between the semiconductor devices or semiconductor integrated circuits from remaining on separated semiconductor devices or semiconductor integrated circuits.