FinFET structure with multiple workfunctions and method for fabricating the same

FinFET structure with multiple workfunctions and method for fabricating the same

A method for fabricating a multiple-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure and etching the first workfunction material layer so as to completely remove the first workfunction material layer from al...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SEHGAL AKSHEY, ALLIMI BAMIDELE S, WEI ANDY C
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for fabricating a multiple-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure and etching the first workfunction material layer so as to completely remove the first workfunction material layer from all but a first trench of the plurality of trenches. Further, the method includes depositing a second workfunction material in a layer in the plurality of trenches and etching the second workfunction material layer so as to completely remove the second workfunction material layer from all but a second trench of the plurality of trenches. Still further, the method includes depositing a third workfunction material in a layer in the plurality of trenches.