Fatal failure diagnostics circuit and methodology

A fault diagnostic circuit (100) and associated method of operation are described for testing an FET device (114) for a gate-drain short failure (113) by floating the FET gate during a predetermined test period and then comparing (118) the FET output voltage (115) at the source to a predetermined th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: LEAGUE CHRISTOPHER M
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A fault diagnostic circuit (100) and associated method of operation are described for testing an FET device (114) for a gate-drain short failure (113) by floating the FET gate during a predetermined test period and then comparing (118) the FET output voltage (115) at the source to a predetermined threshold voltage (VTHRESHOLD) which may be selected as a percentage of the power supply voltage (VPOWER) for the FET device to determine if the FET output voltage is greater than the threshold voltage, in which case a device fault is signaled (119).