Field-effect transistor and method of creating same

A field-effect transistor has a gate, a source, and a drain. The gate has a via extending through a semiconductor chip substrate from one surface to an opposite surface of the semiconductor chip substrate. The source has a first toroid of ion dopants implanted in the semiconductor chip substrate sur...

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Bibliographische Detailangaben
Hauptverfasser: SHEETS, II JOHN E, GERMANN PHILIP R, MAKI ANDREW B, BECKER DARRYL J, BARTLEY GERALD K
Format: Patent
Sprache:eng
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Zusammenfassung:A field-effect transistor has a gate, a source, and a drain. The gate has a via extending through a semiconductor chip substrate from one surface to an opposite surface of the semiconductor chip substrate. The source has a first toroid of ion dopants implanted in the semiconductor chip substrate surrounding one end of the via on the one surface of the semiconductor chip substrate. The drain has a second toroid of ion dopants implanted in the semiconductor chip substrate surrounding an opposite end of the via on the opposite surface of the semiconductor chip substrate.