Method and apparatus for preparation of granular polysilicon

An apparatus for preparing granular polysilicon comprises a reactor tube, a reactor shell, an internal heater, and components for controlling pressure, supplying a fluidizing gas and a reaction gas, discharging gas, and discharging particles. The reactor tube is associated with an inner space compri...

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Bibliographische Detailangaben
Hauptverfasser:	YOON KYUNG KOO, KIM HEE YOUNG, PARK YONG KI, CHOI WON CHOON
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	An apparatus for preparing granular polysilicon comprises a reactor tube, a reactor shell, an internal heater, and components for controlling pressure, supplying a fluidizing gas and a reaction gas, discharging gas, and discharging particles. The reactor tube is associated with an inner space comprising an inner zone that contains a bed of silicon particles and is the site at which silicon deposition occurs. The inner zone comprises a heating zone and a reaction zone. The fluidizing gas supplying component supplies a fluidizing gas for fluidizing the bed of silicon particles to a bottom of the heating zone. The apparatus can minimize the problems occurring during the heating of silicon particles at high temperature for silicon deposition on the surface of the silicon particles.