Semiconductor imaging device with which semiconductor elements of pixel area and other areas has same characteristics

Semiconductor imaging device with which semiconductor elements of pixel area and other areas has same characteristics

Photoelectric conversion elements are arranged in a pixel area. A circuit area is arranged around the pixel area. An interconnect including copper is arranged in the pixel area and circuit area. A cap layer is arranged on the interconnect. Wherein the cap layer except a part on the interconnect is r...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: KOIKE HIDETOSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Photoelectric conversion elements are arranged in a pixel area. A circuit area is arranged around the pixel area. An interconnect including copper is arranged in the pixel area and circuit area. A cap layer is arranged on the interconnect. Wherein the cap layer except a part on the interconnect is removed from the pixel area and circuit area.