Diamond SOI with thin silicon nitride layer and related methods

A method and structure for a semiconductor device including a thin nitride layer formed between a diamond SOI layer and device silicon layer to block diffusion of ions and improve lifetime of the device silicon.

Bibliographische Detailangaben

Hauptverfasser:	JEROME RICK C, HOOPINGARNER KEVIN, MCLACHLAN CRAIG, HEBERT FRANCOIS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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