Diamond SOI with thin silicon nitride layer and related methods

Diamond SOI with thin silicon nitride layer and related methods

A method and structure for a semiconductor device including a thin nitride layer formed between a diamond SOI layer and device silicon layer to block diffusion of ions and improve lifetime of the device silicon.

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Bibliographische Detailangaben
Hauptverfasser: JEROME RICK C, HOOPINGARNER KEVIN, MCLACHLAN CRAIG, HEBERT FRANCOIS
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method and structure for a semiconductor device including a thin nitride layer formed between a diamond SOI layer and device silicon layer to block diffusion of ions and improve lifetime of the device silicon.