HBAR resonator with a high level of integration

The invention relates to a resonator of the high bulk acoustic resonator HBAR type, for operating at a pre-determined working frequency, comprising: a piezoelectric transducer (6), an acoustic substrate (10), a counter-electrode (8) formed by a metal layer adhering to a first face of the transducer...

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Bibliographische Detailangaben
Hauptverfasser: BALLANDRAS SYLVAIN, GACHON DORIAN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The invention relates to a resonator of the high bulk acoustic resonator HBAR type, for operating at a pre-determined working frequency, comprising: a piezoelectric transducer (6), an acoustic substrate (10), a counter-electrode (8) formed by a metal layer adhering to a first face of the transducer (6) and a face of the acoustic substrate (10), and an electrode (4) arranged on a second face of the transducer (6) facing away from the first face of the transducer (6) and the substrate (10). Said resonator is characterized in that the relative arrangement of the transducer (6) and the substrate (10) is such that the polarization direction P of the shearing mode of the transducer (6) and the direction of polarization P of the at least one shearing mode of the substrate (10) corresponding to the second cutting angle 2 are aligned, and the second cutting angle 2 of the substrate (10) is such that the temperature coefficient of the frequency of the corresponding first order CTFB1 is a local extremum with an absolute value of less than 20 ppm·K−1, and the variation of CTFB1 from said value of Θ2 is slight with an absolute value of less than 2 ppm·K−1/degree.