Plasma processing method

In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUMOTO TSUYOSHI, INOUE YOSHIHARU, YAKUSHIJI MAMORU, MIYAJI MASAKAZU, ONO TETSUO, KANEKIYO TADAMITSU, MORIMOTO MICHIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY GLASS JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS
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Beschreibung
Zusammenfassung:	In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.