Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layer

Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layer

Provided are nonvolatile memory devices and a method of forming the same. A tunnel insulating pattern is provided on a substrate, and a floating gate is provided on the tunnel insulating pattern. A floating gate cap having a charge trap site is provided on the floating gate, and a gate dielectric pa...

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Bibliographische Detailangaben
Hauptverfasser: LEE DOHYUN, CHOI JUNGDAL, CHO BYUNGKYU, HUR SUNGHOI, LEE JAEDUK, FAYRUSHIN ALBERT, SEOL KWANG SOO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Provided are nonvolatile memory devices and a method of forming the same. A tunnel insulating pattern is provided on a substrate, and a floating gate is provided on the tunnel insulating pattern. A floating gate cap having a charge trap site is provided on the floating gate, and a gate dielectric pattern is provided on the floating gate cap. A control gate is provided on the gate dielectric pattern.