Method of forming semiconductor device having self-aligned plug

Method of forming semiconductor device having self-aligned plug

A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHIN CHUL-HO, CHO SUNG-LAE, IM DONG-HYUN, KIM IK-SOO, JEONG SANG-SUP, PARK DOO-HWAN, KWON SUNG-UN, EOM KYOUNG-HA, OH GYU-HWAN, BAE BYOUNG-JAE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.