Photoresist composition and method of fabricating thin film transistor substrate

The present invention relates to a photoresist composition for digital exposure and a method of fabricating a thin film transistor substrate. The photoresist composition for digital exposure includes a binder resin including a novolak resin and a compound represented by the chemical formula (1), a p...

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Bibliographische Detailangaben
Hauptverfasser:	BYEON JA-HUN, LEE HI-KUK, YUN SANG-HYUN, PARK JUNG-IN, KIM DONG-MIN, JEON WOO-SEOK, KIM BYUNG-UK, KIM SEUNG-KI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a photoresist composition for digital exposure and a method of fabricating a thin film transistor substrate. The photoresist composition for digital exposure includes a binder resin including a novolak resin and a compound represented by the chemical formula (1), a photosensitizer including a diazide-based compound, and a solvent: wherein R1-R9 each include a hydrogen atom, an alkyl group, or a benzyl group, a is an integer from 0 to 10, b is an integer from 0 to 100, and c is an integer from 0 to 10.