Semiconductor process

A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in...

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Bibliographische Detailangaben
Hauptverfasser: HUANG SHINUAN, LIU CHIA-JONG, HUNG YU-HSIANG, WU YEN-LIANG, CHOU PEI-YU, CHANG CHUNG-FU
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source/drain is formed in the substrate respectively beside the two spacers. After the two source/drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.