Image sensor cross-talk reduction system and method

Image sensor cross-talk reduction system and method

A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material...

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Hauptverfasser: CHANG SHIHIEH, NIAN JUN-NAN, TSAI JIAN-SHIN, CHANG CHIHUNG, LEE ING-JU, HUNG CHING, HUANG CHIHANG
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHANG SHIHIEH
NIAN JUN-NAN
TSAI JIAN-SHIN
CHANG CHIHUNG
LEE ING-JU
HUNG CHING
HUANG CHIHANG
description A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8759928B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8759928B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8759928B23</originalsourceid><addsrcrecordid>eNrjZDD2zE1MT1UoTs0rzi9SSC7KLy7WLUnMyVYoSk0pTS7JzM9TKK4sLknNVUjMS1HITS3JyE_hYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocEW5qaWlkYWTkbGRCgBALlWLHI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Image sensor cross-talk reduction system and method</title><source>esp@cenet</source><creator>CHANG SHIHIEH ; NIAN JUN-NAN ; TSAI JIAN-SHIN ; CHANG CHIHUNG ; LEE ING-JU ; HUNG CHING ; HUANG CHIHANG</creator><creatorcontrib>CHANG SHIHIEH ; NIAN JUN-NAN ; TSAI JIAN-SHIN ; CHANG CHIHUNG ; LEE ING-JU ; HUNG CHING ; HUANG CHIHANG</creatorcontrib><description>A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140624&amp;DB=EPODOC&amp;CC=US&amp;NR=8759928B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140624&amp;DB=EPODOC&amp;CC=US&amp;NR=8759928B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHANG SHIHIEH</creatorcontrib><creatorcontrib>NIAN JUN-NAN</creatorcontrib><creatorcontrib>TSAI JIAN-SHIN</creatorcontrib><creatorcontrib>CHANG CHIHUNG</creatorcontrib><creatorcontrib>LEE ING-JU</creatorcontrib><creatorcontrib>HUNG CHING</creatorcontrib><creatorcontrib>HUANG CHIHANG</creatorcontrib><title>Image sensor cross-talk reduction system and method</title><description>A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD2zE1MT1UoTs0rzi9SSC7KLy7WLUnMyVYoSk0pTS7JzM9TKK4sLknNVUjMS1HITS3JyE_hYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocEW5qaWlkYWTkbGRCgBALlWLHI</recordid><startdate>20140624</startdate><enddate>20140624</enddate><creator>CHANG SHIHIEH</creator><creator>NIAN JUN-NAN</creator><creator>TSAI JIAN-SHIN</creator><creator>CHANG CHIHUNG</creator><creator>LEE ING-JU</creator><creator>HUNG CHING</creator><creator>HUANG CHIHANG</creator><scope>EVB</scope></search><sort><creationdate>20140624</creationdate><title>Image sensor cross-talk reduction system and method</title><author>CHANG SHIHIEH ; NIAN JUN-NAN ; TSAI JIAN-SHIN ; CHANG CHIHUNG ; LEE ING-JU ; HUNG CHING ; HUANG CHIHANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8759928B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHANG SHIHIEH</creatorcontrib><creatorcontrib>NIAN JUN-NAN</creatorcontrib><creatorcontrib>TSAI JIAN-SHIN</creatorcontrib><creatorcontrib>CHANG CHIHUNG</creatorcontrib><creatorcontrib>LEE ING-JU</creatorcontrib><creatorcontrib>HUNG CHING</creatorcontrib><creatorcontrib>HUANG CHIHANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHANG SHIHIEH</au><au>NIAN JUN-NAN</au><au>TSAI JIAN-SHIN</au><au>CHANG CHIHUNG</au><au>LEE ING-JU</au><au>HUNG CHING</au><au>HUANG CHIHANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Image sensor cross-talk reduction system and method</title><date>2014-06-24</date><risdate>2014</risdate><abstract>A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Image sensor cross-talk reduction system and method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T14%3A33%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHANG%20SHIHIEH&rft.date=2014-06-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8759928B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true