Image sensor cross-talk reduction system and method
A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid. |
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