Photoresist underlayer composition and method of manufacturing semiconductor device by using the same

Photoresist underlayer composition and method of manufacturing semiconductor device by using the same

A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1: {(SiO1.5-Y-SiO1.5)x(SiO2)y(XSiO1.5)z}(OH)e(OR1)f.   [Chemical Formula 1]

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Bibliographische Detailangaben
Hauptverfasser: WOO CHANG-SOO, KIM MI-YOUNG, KOH SANG-RAN, CHO HYEON-MO, YUN HUIAN, KIM JONG-SEOB, KIM SANG-KYUN, LEE WOO-JIN
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Beschreibung
Zusammenfassung:A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1: {(SiO1.5-Y-SiO1.5)x(SiO2)y(XSiO1.5)z}(OH)e(OR1)f.   [Chemical Formula 1]