Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

The semiconductor device includes an interlayer insulating film, a wiring provided in the interlayer insulating film, and a SiN film provided over the interlayer insulating film and over the wiring. The peak positions of Si-N bonds of the SiN film, which are measured by FTIR, are within the range of...

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Bibliographische Detailangaben
Hauptverfasser: USAMI TATSUYA, NAKAMURA TOMOYUKI, TSUCHIYA HIDEAKI, OHTO CHIKAKO, MIURA YUKIO, OHTO KOICHI, YOKOGAWA SHINJI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:The semiconductor device includes an interlayer insulating film, a wiring provided in the interlayer insulating film, and a SiN film provided over the interlayer insulating film and over the wiring. The peak positions of Si-N bonds of the SiN film, which are measured by FTIR, are within the range of 845 cm−1 to 860 cm−1. This makes it possible to inhibit current leakage in a silicon nitride film, which is a barrier insulating film for preventing the diffusion of wiring metal.