Inter connection structure including copper pad and pad barrier layer, semiconductor device and electronic apparatus including the same

A semiconductor device including an interconnection structure including a copper pad, a pad barrier layer and a metal redistribution layer, an interconnection structure thereof and methods of fabricating the same are provided. The semiconductor device includes a copper pad disposed on a first layer,...

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Bibliographische Detailangaben
Hauptverfasser: SHIN CHANG-WOO, CHUNG HYUN-SOO, KIM JUM-GON, CHUN JIN-HO, AHN EUNUL
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device including an interconnection structure including a copper pad, a pad barrier layer and a metal redistribution layer, an interconnection structure thereof and methods of fabricating the same are provided. The semiconductor device includes a copper pad disposed on a first layer, a pad barrier layer including titanium disposed on the copper pad, an inorganic insulating layer disposed on the pad barrier layer, a buffer layer disposed on the inorganic insulating layer, wherein the inorganic insulating layer and the buffer layer expose a portion of the pad barrier layer, a seed metal layer disposed on the exposed buffer layer, a metal redistribution layer disposed on the seed metal layer, and a first protective layer disposed on the metal redistribution layer.