Semiconductor device having pad region for wire-bonding and method of manufacturing the semiconductor device
A semiconductor device has a semiconductor substrate, an insulating film disposed on a surface of the semiconductor substrate, and a porous metal film disposed on the insulating film and having a void region containing voids and a void-free region that does not contain any voids. A protective film i...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A semiconductor device has a semiconductor substrate, an insulating film disposed on a surface of the semiconductor substrate, and a porous metal film disposed on the insulating film and having a void region containing voids and a void-free region that does not contain any voids. A protective film is disposed on the porous metal film and has an opening portion defining a pad region having a pad opening end. An interface between the void region and the void-free region of the porous metal film is disposed at one of the pad opening end and a position outside of the pad opening end. A wire is wire-bonded to the porous metal film in the pad region. |
---|