Etchant-free methods of producing a gap between two layers, and devices produced thereby

Etchant-free methods of producing a gap between two materials are provided. Aspects of the methods include providing a structure comprising a first material and a second material, and subjecting the structure to conditions sufficient to cause a decrease in the volume of at least a portion of at leas...

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Bibliographische Detailangaben
Hauptverfasser: NGUYEN CLARK TU-CUONG, HUNG LI-WEN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Etchant-free methods of producing a gap between two materials are provided. Aspects of the methods include providing a structure comprising a first material and a second material, and subjecting the structure to conditions sufficient to cause a decrease in the volume of at least a portion of at least one of the first material and the second material to produce a gap between the first material and the second material. Also provided are devices produced by the methods (e.g., MEMS and NEMS devices), structures used in the methods and methods of making such structures.