TSV pillar as an interconnecting structure

The present invention includes embodiments of a processing method, and resulting structure, for building a chip having a TSV pillar which can be used as an interconnecting structure. The process includes the deposition of a dual diffusion barrier between the TSV and the substrate the TSV is embedded...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: VOLANT RICHARD P, GRAVES-ABE TROY L, LANDERS WILLIAM F, PETRARCA KEVIN S, FAROOQ MUKTA G
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:The present invention includes embodiments of a processing method, and resulting structure, for building a chip having a TSV pillar which can be used as an interconnecting structure. The process includes the deposition of a dual diffusion barrier between the TSV and the substrate the TSV is embedded within. The TSV is then exposed from the back side of the substrate so that at least a portion of the TSV protrudes from the substrate and can be used as a contact for connecting the chip to another surface. The resulting TSV is rigid, highly conductive, can be placed in a tightly pitched grid of contacts, and reduces effects of CTE mismatch.