Semiconductor device with an image sensor and method for the manufacture of such a device

Disclosed are embodiments of a semiconductor device comprising a semiconductor body with a semiconductor image sensor comprising a two-dimensional matrix of picture elements, each picture element comprising a radiation-sensitive element coupled to MOS field effect transistors for reading the radiati...

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Hauptverfasser: HERMES DANIEL HENDRIK JAN MARIA, HOEKSTRA WILLEM, TOREN WILLEM-JAN, FOLKERTS HEIN OTTO, MAAS JORIS PIETER VALENTIJN, MAES WILLEM HENDRIK, VERBUGT DANIEL WILHELMUS ELISABETH
Format: Patent
Sprache:eng
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Zusammenfassung:Disclosed are embodiments of a semiconductor device comprising a semiconductor body with a semiconductor image sensor comprising a two-dimensional matrix of picture elements, each picture element comprising a radiation-sensitive element coupled to MOS field effect transistors for reading the radiation-sensitive elements, wherein a semiconductor region is sunken in the surface of the body having the same conductivity type as the body and having an increased doping concentration, the semiconductor region being disposed between the radiation-sensitive elements of neighboring picture elements.