Photomask processing techniques

Techniques are disclosed for enhancing critical dimension (CD) resolution in photomask processing. In some cases, the techniques can be implemented, for instance, to enhance space and line pattern resolution independently on a given phase-shifting photomask (PSM). The disclosed techniques can be implemented, for example, to extend existing photolithography techniques/technologies (e.g., 193 nm photolithography) to additional process nodes. For instance, some embodiments can be used to produce extremely high-resolution photomasks which generate features having sizes in the 10 nm node and beyond. The disclosed techniques can be implemented in the fabrication of a wide range of integrated circuits (ICs) and other devices.