Image sensor with reduced crosstalk having an isolation region with a second trench in the electrically conductive material of a first trench

Image sensor with reduced crosstalk having an isolation region with a second trench in the electrically conductive material of a first trench

An image sensor having a semiconductor substrate, at least two photosites in the substrate and an isolation region between the photosites. The isolation region has a first trench covered by a thin electrically insulating liner and filled with an electrically conductive material, the conductive mater...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HIRIGOYEN FLAVIEN, MICHELOT JULIEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An image sensor having a semiconductor substrate, at least two photosites in the substrate and an isolation region between the photosites. The isolation region has a first trench covered by a thin electrically insulating liner and filled with an electrically conductive material, the conductive material has a second trench at least partially filled with an optically isolating material.