Control fin heights in FinFET structures

Control fin heights in FinFET structures

A device includes a substrate, an isolation region at a top surface of the substrate, and a semiconductor fin over the isolation region. The semiconductor fin has a fin height smaller than about 400 Å, wherein the fin height is measured from a top surface of the semiconductor fin to a top surface of...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHEN HSIAOU, CHIANG MUI, MOR YI-SHIEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A device includes a substrate, an isolation region at a top surface of the substrate, and a semiconductor fin over the isolation region. The semiconductor fin has a fin height smaller than about 400 Å, wherein the fin height is measured from a top surface of the semiconductor fin to a top surface of the isolation region.