Thin film transistor compositions, and methods relating thereto

The present disclosure is directed to a thin film transistor composition. The thin film transistor composition has a semiconductor material and a substrate. The substrate is composed of a polyimide and a sub-micron filler. The polyimide is derived from at least one aromatic dianhydride component sel...

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Bibliographische Detailangaben
Hauptverfasser:	HE TAO, KOURTAKIS KOSTANTINOS, DUNBAR MEREDITH L, AUMAN BRIAN C
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMISTRY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL PROCESSES OF COMPOUNDING GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PRINTED CIRCUITS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS WORKING-UP
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Beschreibung
Zusammenfassung:	The present disclosure is directed to a thin film transistor composition. The thin film transistor composition has a semiconductor material and a substrate. The substrate is composed of a polyimide and a sub-micron filler. The polyimide is derived from at least one aromatic dianhydride component selected from rigid rod dianhydride, non-rigid rod dianhydride and combinations thereof, and at least one aromatic diamine component selected from rigid rod diamine, non-rigid rod diamine and combinations thereof. The mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine. The sub-micron filler is less than 550 nanometers in at least one dimension; has an aspect ratio greater than 3:1; is less than the thickness of the film in all dimensions.