Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of recycling chemical mechanical polishing aqueous dispersion

Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of recycling chemical mechanical polishing aqueous dispersion

A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains, (B) an organic acid, and (C1) copper ions or (C2) at least one kind of metal atoms selected from Ta, Ti, and Rb, the chemical mechanical polishing aqueous dispersion including the copper ions (C1) at a concentration of...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHINODA TOMOTAKA, NISHIMOTO KAZUO
Format: Patent
Sprache:eng
Schlagworte:
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DRESSING OR CONDITIONING OF ABRADING SURFACES
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
POLISHING
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
TRANSPORTING
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Beschreibung
Zusammenfassung:A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains, (B) an organic acid, and (C1) copper ions or (C2) at least one kind of metal atoms selected from Ta, Ti, and Rb, the chemical mechanical polishing aqueous dispersion including the copper ions (C1) at a concentration of 1×101 to 2×105 ppm, or including the at least one kind of metal atoms (C2) selected from Ta, Ti, and Rb at a concentration of 1×10-1 to 1×103 ppm.