Method of making a semiconductor device having a multicomponent oxide

A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

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Bibliographische Detailangaben
Hauptverfasser:	HOFFMAN RANDY L, MARDILOVICH PETER P, HERMAN GREGORY S
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.