Methods for manufacturing high dielectric constant films

Provided are methods for depositing a high-k dielectric film on a substrate. The methods comprise annealing a substrate after cleaning the surface to create dangling bonds and depositing the high-k dielectric film on the annealed surface.

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Bibliographische Detailangaben
Hauptverfasser: SATO TATSUYA E, MAHAJANI MAITREYEE
Format: Patent
Sprache:eng
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Zusammenfassung:Provided are methods for depositing a high-k dielectric film on a substrate. The methods comprise annealing a substrate after cleaning the surface to create dangling bonds and depositing the high-k dielectric film on the annealed surface.