Magnetoresistive device with a hard bias capping layer

Magnetoresistive device with a hard bias capping layer

A magnetoresistive device is provided. The device includes at least one magnetoresistive element having at least one side, at least one hard bias layer in proximity to the at least one side of the at least one magnetic element, and a hard bias capping structure on the at least one hard bias layer. T...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HONG LIUBO, ZHU HONGLIN
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
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Beschreibung
Zusammenfassung:A magnetoresistive device is provided. The device includes at least one magnetoresistive element having at least one side, at least one hard bias layer in proximity to the at least one side of the at least one magnetic element, and a hard bias capping structure on the at least one hard bias layer. The hard bias capping structure includes a protective layer covering at least a first portion of the at least one hard bias layer and a planarization stop layer covering a second portion of the at least one hard bias layer. A portion of the protective layer resides between the planarization stop layer and the at least one hard bias layer.