System for producing patterned silicon carbide structures

A method of forming ceramic pattern structures of silicon carbide film includes depositing an electron-beam resist or a photo-resist onto a substrate. A portion of the resist is selectively removed from the substrate to form a resist pattern on the substrate. A film of pre-ceramic polymer that inclu...

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Bibliographische Detailangaben
Hauptverfasser:	SCHMIDT DANIEL F, THERRIEN JOEL M
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	A method of forming ceramic pattern structures of silicon carbide film includes depositing an electron-beam resist or a photo-resist onto a substrate. A portion of the resist is selectively removed from the substrate to form a resist pattern on the substrate. A film of pre-ceramic polymer that includes silicon and carbon is deposited onto the substrate and resist pattern and the pre-ceramic polymer film is cured. A portion of the cured pre-ceramic polymer film on the resist pattern is removed, thereby forming a pre-ceramic polymer pattern on the substrate. The pre-ceramic polymer pattern is then converted to a ceramic pattern.